Guide pattern data correcting method, pattern forming method, and computer readable record medium

ABSTRACT

According to one embodiment, a guide pattern data correcting method is for correcting guide pattern data of a physical guide for formation of a polymer material to be microphase-separated. The physical guide has a plurality of concave portions in the guide pattern data, and at least two concave portions out of the plurality of concave portions are connected to each other. The guide pattern data is subjected to correction by shifting or rotation of at least either of the two connected concave portions.

CROSS REFERENCE TO RELATED APPLICATION

This application is based upon and claims benefit of priority from theJapanese Patent Application No. 2013-29071, filed on Feb. 18, 2013, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a guide pattern datacorrecting method, a pattern forming method, and a computer readablerecord medium.

BACKGROUND

As candidates for a next-generation lithography technique in asemiconductor element manufacturing process, a double patterningtechnique by means of ArF-immersion exposure, EUV lithography,nanoimprinting, and the like are known. These lithography techniqueshave held a variety of problems such as a cost increase and through-putdeterioration in association with increased fineness of a pattern.

Under these circumstances, self-assembly (DSA: Directed Self-Assembly)has been expected to be applied to the lithography technique. Since theself-assembly occurs due to a voluntary behavior of energystabilization, a pattern with high dimensional accuracy can be formed.In particular, a technique of applying microphase separation of ahigh-polymer block copolymer enables formation of periodic structures ina variety of shapes of several to several hundred nm (nanometers) bysimple coating and anneal processes. By transforming the high-polymerblock copolymer into a spherical shape, a cylindrical shape, a lamellarshape or the like in accordance with a composition ratio of its block,and changing the size of the copolymer in accordance with its molecularweight, it is possible to form a dot pattern, a hole or a pillarpattern, a line pattern, or the like, having a variety of dimensions.

In order to form a desired pattern in a broad range by means of DSA, itis of necessity to provide a guide for controlling a generation positionof a polymer phase formed by self-assembly. As the guide known are: aphysical guide (graphoepitaxy) which has a concavo-convex structure withrespect to the substrate surface and forms a microphase-separationpattern in its concave portion; and a chemical guide (chemical epitaxy)which is formed to be an underlayer of the DSA material and controls,based on a difference in its surface energy, a formation position of themicrophase separation pattern.

Since the microphase separation pattern is formed with respect to apreviously formed guide pattern, its alignment to a foundation pattern(underlying pattern) as an ultimate aligned object is indirectalignment, thereby causing low alignment accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1D are views each illustrating an example of a self-assemblypattern;

FIGS. 2A to 2C are views each illustrating an example of theself-assembly pattern;

FIG. 3 is a block diagram of a guide pattern data correcting deviceaccording to a first embodiment;

FIG. 4 is a flowchart explaining a pattern forming method of the firstembodiment;

FIG. 5 is a view illustrating design data;

FIG. 6 is a view illustrating a guide pattern;

FIG. 7 is a view illustrating a correction guide pattern according tothe first embodiment;

FIG. 8 is a view illustrating a self-assembly pattern according to thefirst embodiment;

FIG. 9 is a view illustrating design data;

FIG. 10 is a view illustrating a guide pattern;

FIG. 11 is a view illustrating a collecting guide pattern according to asecond embodiment;

FIG. 12 is a view illustrating a self-assembly pattern according to thesecond embodiment;

FIG. 13 is a view illustrating design data;

FIG. 14 is a view illustrating a guide pattern;

FIG. 15 is a view illustrating a correction guide pattern according to athird embodiment;

FIG. 16 is a view illustrating a self-assembly pattern according to thethird embodiment;

FIG. 17 is a view illustrating processing of a foundation layeraccording to the third embodiment; and

FIG. 18 is a view illustrating a correction guide pattern according to amodified example.

DETAILED DESCRIPTION

According to one embodiment, a guide pattern data correcting method isfor correcting guide pattern data of a physical guide for formation of apolymer material to be microphase-separated. The physical guide has aplurality of concave portions in the guide pattern data, and at leasttwo concave portions out of the plurality of concave portions areconnected to each other. The guide pattern data is subjected tocorrection by shifting or rotation of at least either of the twoconnected concave portions.

Embodiments will now be explained with reference to the accompanyingdrawings.

Prior to description of embodiments of the present invention, howinventors made the present invention will be described.

FIGS. 1A to 1D are top views each illustrating an example of aself-assembly pattern formed by microphase separation of a polymerlayer. First, as illustrated in FIG. 1A, a physical guide 10 with aconcavo-convex structure having a concave portion 11 in an ellipticshape (or a rounded rectangle shape) is formed. Next, as illustrated inFIG. 1B, a polymer layer 12 containing a polystyrene (PS) andpolymethylmethacrylate (PMMA) block copolymer, for example, is formedinside this concave portion (slotted hole) 11.

Then, annealing treatment is performed, to microphase-separating thepolymer layer 12 and form a self-assembly pattern. The form of theself-assembly pattern varies in accordance with compositions andmolecular weights of PS and PMMA contained in the polymer layer 12. Forexample, as illustrated in FIG. 1C, a self-assembly pattern 13 isobtained which is made up of a plurality of first polymer sections 13Aeach containing PMMA and having a cylindrical structure with a truecircular-shaped top surface, and a second polymer section 13B containingPS and surrounding the first polymer section 13A. Alternatively, asillustrated in FIG. 1D, a self-assembly pattern 14 is obtained which ismade up of a first polymer section 14A containing PMMA and having anelliptic cylindrical structure with an elliptic shaped top surface, anda second polymer section 14B containing PS and surrounding the firstpolymer section 14A.

FIG. 2A illustrates an example of forming the physical guide inalignment with an underlying line pattern 15. In FIG. 2A, the concaveportions 11 of the physical guide are disposed in a staggered manner.When a pitch of the line pattern 15 is small, adjacent concave portions11 are connected to each other as illustrated in FIG. 2B. In otherwords, two concave portions 11 share part of a region 16. When theself-assembly pattern 14 illustrated in FIG. 1D is formed using thephysical guide as illustrated in FIG. 2B, the region 16 with the twoconcave portions 11 connected to each other has an influence on theshape of the end of the first polymer section 14A, as illustrated inFIG. 2C. This has lowered the accuracy in alignment of the first polymersection 14A with the line pattern 15. Moreover, even in the case offorming the self-assembly pattern 13 as illustrated in FIG. 1C, theconnection between the two concave portions 11 has lowered the accuracyin alignment of the first polymer section 13A with the line pattern 15.

In the following embodiments, the problem as described above will besolved. Hereinafter, embodiments of the present invention will bedescribed based on drawings.

FIG. 3 is a block diagram of a guide pattern data correcting device, andFIG. 4 is a flowchart explaining a pattern forming method, to which aguide pattern data correcting method according to the present embodimenthas been applied.

As illustrated in FIG. 3, the guide pattern data correcting deviceincludes a storage unit 1 for storing polymer information and acorrection rule, a creation unit 2 for creating guide pattern data basedon design data and the polymer information, and a correction unit 3 forcorrecting the guide pattern data based on the correction rule, tocreate correction guide pattern data. The design data here is data of apattern that is formed using self-assembly of a polymer material.Moreover, the guide pattern data is pattern data of the physical guidefor controlling a generation position of the self-assembly pattern.Furthermore, the polymer information stored in the storage unit 1includes correspondence of the polymer material to the shape, size,position and the like of the self-assembly pattern formed byself-assembly of the polymer material inside the physical guide. Thecorrection rule is a rule which is referred to at the time of correctingthe guide pattern data, and its detail will be described later.

For example, the creation unit 2 is input with design data where twotrue circles 102 each having a diameter of 20 nm and being arranged sideby side with a pitch of 50 nm (nanometers, hereinafter abbreviated asnm) as illustrated in FIG. 5 are shifted 40 nm each in a staggeredmanner with a pitch of 120 nm and then disposed (Step S1 of FIG. 4).

Using the polymer information, the creation unit 2 obtains a patternshape of a physical guide for forming a self-assembly patterncorresponding to the input design data, to create guide pattern data(Step S2). For example, using the information stored in the storage unit1, the creation unit 2 obtains a physical guide pattern for forming twoopenings which are adjacent to each other with the minimum interval of30 nm, to create guide pattern data as illustrated in FIG. 6 whereopenings 104 a to 104 f each having a minor axis of 60 nm and a majoraxis of 140 nm are disposed in a staggered manner. Here, each opening isconnected to the opening adjacent thereto. In other words, the openingshares part of a region 105 with the adjacent opening. For example, onelongitudinal (horizontal, in the figure) end of the opening 104 c isconnected with the opening 104 b, and the other longitudinal end thereofis connected with the opening 104 d.

Using the correction rule, the correction unit 3 corrects the guidepattern data created by the creation unit 2 (Step S3). As describedabove, when the two adjacent openings (concave portions) of the guidepattern are connected to each other, the shape of the self-assemblypattern obtained by microphase separation is distorted, to causevariations in pattern formation position, or the like (cf. FIG. 2C). Thecorrection unit 3 corrects the guide pattern so as to suppressdistortion that occurs in the shape of the self-assembly pattern andprevent lowering of the accuracy in alignment with the foundationpattern.

For example, as illustrated in FIG. 7, out of the plurality of openings104 a to 104 f in the guide pattern, the openings 104 b to 104 e eachhaving both ends thereof connected to the adjacent openings are shifted2 nm in directions getting further from the respective adjacent openingsalong a minor-axial direction (vertical direction in the figure). Usingsuch a guide pattern allows formation of the self-assembly pattern inalignment with a target position.

Shifting the opening reduces the size of the region 105 shared with theadjacent opening. In other words, correcting the guide pattern increasesa distance between centroids of the two connected openings. For example,a distance L1 between the centroids of the opening 104 b and the opening104 c in the guide pattern illustrated in FIG. 6 is longer than adistance L2 between the centroids of the opening 104 b and the opening104 c in the correction guide pattern illustrated in FIG. 7.

In the correction rule, shift-correction processing as above is definedsuch that the region shared by the openings adjacent to each otherbecomes smaller, namely such that the distance between the centroids ofthe openings adjacent to each other becomes longer.

For example, a correction table as below is held as the correction rulewith respect to an area A of the region 105 shared by the openings. A0,A1 and A2 satisfy 0<A0<A1<A2. Moreover, a1 and a2 satisfy 0<a1<a2.

TABLE 1 Area A of region shared by Shift openings amount 0 ≦ A < A0 0 A0≦ A < A1 a1 A1 ≦ A < A2 a2 . . . . . .

When the area A of the region shared by the openings is smaller than A0,the shift-correction processing need not be performed. Further, when thearea A is large, the shift amount is preferably made large. Referring tosuch a correction table allows execution of the correction processing.

It is to be noted that, although the correction table using the area Aof the region 105 shared by the openings has been taken as an examplehere, another indicator such as a distance between contact points of theopenings may be employed.

In the actual manufacturing flow, there is prepared a mask required in alithography process for forming the correction guide pattern generatedby the correction unit 3 as the physical guide pattern on the substrate.For that purpose, the correction guide pattern data is regarded asdesign data and OPC (Optical Proximity Correction) is performed, tocreate mask data (Steps S4, S5). Then, using the mask data, a photomaskis prepared (Step S6).

Using the photomask as thus prepared, the physical guide is formed on asubstrate (Step S7). For example, as illustrated in FIG. 8, a foundationlayer is formed which has a line pattern alternately provided withlinear tungsten 106 and linear insulating films 108 with a half-pitch of20 nm on the silicon substrate.

Then, an interlayer insulating film with a film thickness of 200 nm isformed on the foundation layer by CVD (Chemical Vapor Deposition).

Next, SOC (Spin-On-Carbon, application-type carbon, hereinafterabbreviated as SOC) is applied onto this interlayer insulating film, andbaking treatment is performed, to form an SOC film with a film thicknessof 100 nm.

Subsequently, SOG (Spin-On-Glass, application-type glass, hereinafterabbreviated as SOG) is applied onto this SOC film, and baking treatmentis performed, to form an SOG film with a film thickness of 45 nm.

Resist is applied onto this SOG film, and baking treatment is performed,to form a resist film with a film thickness of 100 nm, and form a resistpattern by lithography using the foregoing photomask.

The SOG film is etched with the resist pattern used as a mask, and theSOC film is then etched with the SOG film as a mask, to form a physicalguide made up of the laminated SOC film and SOG film. The pattern shapeof this physical guide corresponds to the correction guide pattern.

Thereafter, a polymer material is formed in the opening (concaveportion) of the physical guide, and the polymer material ismicrophase-separated, to form a self-assembly pattern (Step S8). Thepolymer material is applied in such an amount that the film thickness ofthe polymer material layer inside the opening is comparable to the filmthickness to the physical guide.

As the polymer material, for example, a block copolymer formed bybinding between a first polymer block chain and a second polymer blockchain is used. As the block copolymer, for example, a polystyrene (PS)and polymethylmethacrylate (PMMA) block copolymer can be employed.Compositions of PS and PMMA are adjusted, so as to obtain a cylinderstructure at the time of phase separation. A solution of polyethyleneglycol monoethyl ether acetate (PGMEA), which contains the PS and PMMAblock copolymer with a concentration of 1.0 wt %, is spin-coated at arevolution speed of 1500 rpm.

Subsequently, the substrate is subjected to annealing treatment in anitrogen atmosphere at 240° C. for one minute, to microphase-separatethe block copolymer. Accordingly, as illustrated in FIG. 8, aself-assembly pattern is formed where two PMMA phases 110, each having acylindrical structure whose top surface is a true circle with a diameterof 20 nm, are arranged side by side with a pitch of 50 nm inside eachopening of the physical guide, and a PS phase 112 surrounds these PMMAphases 110. It is to be noted that in FIG. 8, illustrations of thephysical guide and the interlayer insulating film are omitted.

As illustrated in FIG. 7, since the guide pattern has been corrected, acentroidal position of the PMMA phase 110 agrees with a central line ofthe tungsten line 106.

Thereafter, PMMA is selectively removed using a difference in etchingrate between PS and PMMA, to form a hole pattern. Subsequently, with theremaining PS and the physical guide used as a mask, the hole pattern istransferred to the interlayer insulating film. Accordingly, the holepattern having high accuracy in alignment with the underlying tungstenline 106 can be transferred to the interlayer insulating film (Step S9).

As thus described, according to the present embodiment, when theadjacent openings of the guide pattern are connected to each other,performing correction so as to make the distance between the centroidsof the adjacent openings longer can improve the accuracy in alignment ofthe self-assembly pattern with the underlying pattern.

(Second Embodiment)

In the above first embodiment, the example as illustrated in FIG. 5 hasbeen described in which the design data, where the two true circles 102arranged side by side are disposed in a staggered manner, is input intothe creation unit 2, but the design data may be one as in FIG. 9 wheretwo true circles 202 each having a diameter of 20 nm and being arrangedside by side with a pitch of 50 nm are disposed with an interval of 120nm along a first direction (horizontal direction in the figure) and withan interval of 40 nm along a second direction (vertical direction in thefigure) orthogonal to the first direction.

Using the polymer information, the creation unit 2 obtains a patternshape of a physical guide for forming a self-assembly patterncorresponding to the input design data, to create guide pattern data.For example, using the information stored in the storage unit 1, thecreation unit 2 obtains a physical guide pattern for forming twoopenings which are adjacent to each other with the minimum interval of30 nm, to create guide pattern data as illustrated in FIG. 10 whereopenings 204 a to 204 f each having a minor axis of 60 nm and a majoraxis of 140 nm are disposed in a stepwise manner. In other words,centroids of the openings 204 a to 204 f are disposed on the samestraight line.

Here, each opening is connected to the opening adjacent thereto. Inother words, the opening shares part of a region 205 with the adjacentopening. For example, an upper portion of one longitudinal (horizontal,in the figure) end of the opening 204 c is connected with the opening204 b, and a lower portion of the other longitudinal end thereof isconnected with the opening 204 d.

Using the correction rule, the correction unit 3 corrects the guidepattern data created by the creation unit 2. For example, as illustratedin FIG. 11, out of the plurality of openings 204 a to 204 f in the guidepattern, the openings 204 b to 204 e each having both ends thereofconnected to the adjacent openings are rotated 3 degreescounterclockwise with the centroids of the respective openings at thecenters.

Rotating the opening reduces the size of the region 205 shared with theadjacent opening.

In the correction rule, rotation-correction processing is defined inwhich the opening is rotated with its centroid at the center such thatthe region shared with its adjacent opening becomes smaller.

In the actual manufacturing flow, there is prepared a mask required in alithography process for forming the correction guide pattern generatedby the correction unit 3 as the physical guide pattern on the substrate.For that purpose, the correction guide pattern data is regarded asdesign data and OPC (Optical Proximity Correction) is performed, tocreate mask data. Then, using the mask data, a photomask is prepared.

Using the photomask as thus prepared, the physical guide is formed on asubstrate. For example, as illustrated in FIG. 12, a foundation layer isformed which has a line pattern alternately provided with linearamorphous silicon 206 and linear silicon dioxide film 208 with ahalf-pitch of 20 nm on the silicon substrate.

Then, an interlayer insulating film with a film thickness of 200 nm isformed on the foundation layer by CVD (Chemical Vapor Deposition).

Next, SOC (Spin-On-Carbon) is applied onto this interlayer insulatingfilm, and baking treatment is performed, to form an SOC film with a filmthickness of 100 nm.

Subsequently, SOG (Spin-On-Glass) is applied onto this SOC film, andbaking treatment is performed, to form an SOG film with a film thicknessof 45 nm.

Resist is applied onto this SOG film, and baking treatment is performed,to form a resist film with a film thickness of 100 nm, and form a resistpattern by lithography using the foregoing photomask. This resistpattern is used as a physical guide. The pattern shape of the physicalguide corresponds to the correction guide pattern.

Thereafter, a polymer material is formed in the opening (concaveportion) of the physical guide, and the polymer material ismicrophase-separated, to form a self-assembly pattern. The polymermaterial is applied in such an amount that the film thickness of thepolymer material layer inside the opening is comparable to the filmthickness to the physical guide.

As the polymer material, for example, a block copolymer formed bybinding between the first polymer block chain and the second polymerblock chain is used. As the block copolymer, for example, a polystyrene(PS) and polymethylmethacrylate (PMMA) block copolymer can be employed.Compositions of PS and PMMA are adjusted, so as to obtain a cylinderstructure at the time of phase separation. A solution of polyethyleneglycol monoethyl ether acetate (PGMEA), which contains the PS and PMMAblock copolymer with a concentration of 1.0 wt %, is spin-coated at arevolution speed of 1500 rpm.

Subsequently, the substrate is subjected to annealing treatment in anitrogen atmosphere at 240° C. for one minute, to microphase-separatethe block copolymer. Accordingly, as illustrated in FIG. 12, aself-assembly pattern is formed where two PMMA phases 210, each having acylindrical structure whose top surface is a true circle with a diameterof 20 nm are placed side by side with a pitch of 50 nm inside eachopening of the physical guide and a PS phase 212 surrounds this PMMAphase 210. It is to be noted that in FIG. 12, illustrations of thephysical guide, the SOG film, the SOC film, and the interlayerinsulating film are omitted.

As illustrated in FIG. 11, since the guide pattern has been corrected, acentroidal position of the PMMA phase 210 agrees with a central line ofthe amorphous silicon line 206.

Thereafter, PMMA is selectively removed using a difference in etchingrate between PS and PMMA, to form a hole pattern. The SOG film is etchedwith the remaining PS and the physical guide (resist pattern) used as amask, and the SOC film is then etched with the SOG film as a mask.

Subsequently, with the SOC film used as a mask, the hole pattern istransferred to the interlayer insulating film. Accordingly, the holepattern having high accuracy in alignment with the underlying amorphoussilicon line 206 can be transferred to the interlayer insulating film.

As thus described, according to the present embodiment, when theadjacent openings of the guide pattern are connected to each other,performing correction so as to rotate the opening with its centroid atthe center can improve the accuracy in alignment of the self-assemblypattern with the underlying pattern.

(Third Embodiment)

In the above first and second embodiments, the examples have beendescribed in which the design data where the two true circles arrangedside by side with the minimum interval are disposed in a staggeredmanner or in a stepwise manner is input into the creation unit 2, butthe design data may be one as in FIG. 13 where two ellipses 302 eachhaving a major axis of 80 nm and a minor axis of 20 nm are disposed withan interval of 80 nm along a first direction (horizontal direction inthe figure) and with an interval of 40 nm along a second direction(vertical direction in the figure) orthogonal to a first direction.

Using the polymer information, the creation unit 2 obtains a patternshape of a physical guide for forming a self-assembly patterncorresponding to the input design data, to create guide pattern data.For example, using the information stored in the storage unit 1, thecreation unit 2 obtains a physical guide pattern for forming an openingin an elliptic shape having a major axis of 80 nm and a minor axis of 20nm, to create guide pattern data as illustrated in FIG. 14 whereopenings 304 a to 304 d each having a minor axis of 50 nm and a majoraxis of 110 nm are disposed in a stepwise manner. In other words,centroids of the openings 304 a to 304 d are disposed on the samestraight line.

Here, each opening is connected to the opening adjacent thereto. Inother words, the opening shares part of a region 305 with the adjacentopening. For example, an upper portion of one longitudinal (horizontal,in the figure) end of the opening 304 b is connected with the opening304 a, and a lower portion of the other longitudinal end thereof isconnected with the opening 304 c.

Using the correction rule, the correction unit 3 corrects the guidepattern data, created by the creation unit 2. For example, asillustrated in FIG. 15, out of the plurality of openings 304 a to 304 din the guide pattern, the openings 304 b and 304 c , each having bothends thereof connected to the adjacent openings, are rotated 4 degreescounterclockwise with the centroids of the respective openings at thecenters.

Rotating the opening reduces the size of the region 305 shared with theadjacent opening.

In the correction rule, rotation-correction processing is defined inwhich the opening is rotated with its centroid at the center such thatthe region shared with its adjacent opening becomes smaller.

In the actual manufacturing flow, there is prepared a mask required in alithography process for forming the correction guide pattern generatedby the correction unit 3 as the physical guide pattern on the substrate.For that purpose, the correction guide pattern data is regarded asdesign data and OPC (Optical Proximity Correction) is performed, tocreate mask data. Then, using the mask data, a photomask is prepared.

Using the photomask as thus prepared, the physical guide is formed on asubstrate. For example, as illustrated in FIG. 16, a foundation layer isformed which has an oxide film provided on the silicon substrate and aline pattern 306 made of a linear amorphous silicon film with ahalf-pitch of 20 nm and a height of 80 nm on the silicon substrate. Ahollow is formed between the line of amorphous silicon.

Next, SOC (Spin-On-Carbon) is applied onto this foundation layer, andbaking treatment is performed, to form an SOC film with a film thicknessof 200 nm.

Subsequently, SOG (Spin-On-Glass) is applied onto this SOC film, andbaking treatment is performed, to form an SOG film with a film thicknessof 45 nm.

Resist is applied onto this SOG film, and baking treatment is performed,to form a resist film with a film thickness of 100 nm, and form a resistpattern by lithography using the foregoing photomask. This resistpattern is used as a physical guide. The pattern shape of the physicalguide corresponds to the correction guide pattern.

Thereafter, a polymer material is formed in the opening (concaveportion) of the physical guide, and the polymer material ismicrophase-separated, to form a self-assembly pattern. An amount ofapplication of the polymer material is set such that the film thicknessof the polymer material layer inside the opening is comparable to thefilm thickness of the physical guide.

As the polymer material, for example, a block copolymer formed bybinding between the first polymer block chain and the second polymerblock chain is used. As the block copolymer, for example, a polystyrene(PS) and polymethylmethacrylate (PMMA) block copolymer can be employed.Compositions of PS and PMMA are adjusted, so as to obtain an ellipticcylindrical structure at the time of phase separation. A solution ofpolyethylene glycol monoethyl ether acetate (PGMEA), which contains thePS and PMMA block copolymer with concentration of 1.0 wt %, isspin-coated at a revolution speed of 1500 rpm.

Subsequently, the substrate is subjected to annealing treatment in anitrogen atmosphere at 240° C. for one minute, to microphase-separatethe block copolymer. Accordingly, as illustrated in FIG. 16, aself-assembly pattern is formed inside each opening of the physicalguide, the pattern having a PMMA phase 310 with an elliptic cylindricalstructure whose top surface is an ellipse with a major axis of 80 nm anda minor axis of 20 nm, and a PS phase 312 which surrounds this PMMAphase 310. It should be noted that in FIG. 16, only the line pattern 306and the self-assembly pattern are illustrated for convenience indescription.

As illustrated in FIG. 15, since the guide pattern has been corrected,the long axial direction of the PMMA phase 310 is orthogonal to the linepattern 306.

Thereafter, PMMA is selectively removed using a difference in etchingrate between PS and PMMA, to form a hole pattern. The SOG film is etchedwith the remaining PS and the physical guide (resist pattern) used as amask, and the SOC film is then etched with the SOG film as a mask.

As illustrated in FIG. 17, at the time of etching the SOC film, theunderlying line pattern 306 is simultaneously etched, to cut off theline pattern 306. Hence a butting shape of the underlying amorphoussilicon lines (shape of the end surfaces of the lines being opposed toeach other) can be formed in a narrow space with high positionalaccuracy. In FIG. 17, only the line pattern 306 is illustrated forconvenience in description.

As thus described, according to the present embodiment, when theadjacent openings of the guide pattern are connected to each other,performing correction so as to rotate the opening with its centroid atthe center can improve the accuracy in alignment of the self-assemblypattern with the underlying pattern.

Although the physical guide made up of the laminated SOC film and SOGfilm has been formed in the above first embodiment, the materialsconstituting the physical guide are not restricted to these.

Although the physical guide made up of the resist has been formed in theabove second and third embodiments, the materials constituting thephysical guide are not restricted to these.

In the above first to third embodiments, the block copolymer (DSAmaterial) has been applied in such an amount that the block copolymerlayer has a thickness comparable to the film thickness of the physicalguide, but the amounts of application may be increased or decreased.

Although the block copolymer has been used as the DSA material in theabove first to third embodiments, a polymer alloy may be used which hasat least two or more kinds of segments such as a blend polymer thatbrings about similar phase separation to the block copolymer. Herein,the blend polymer means a polymer with segments not being connected.

Although the examples have been described in the above first and secondembodiments where the cylindrical structure is formed by microphaseseparation, another shape such as the elliptic cylindrical structure asillustrated in FIG. 1D, a spherical structure, or a lamellar structuremay be formed. Moreover, in the above third embodiment, the shape otherthan the elliptic cylindrical structure, such as a spherical structureor a lamellar structure, may be formed by microphase separation.

Although the correction unit 3 has corrected the guide pattern data byuse of the correction rule stored in the storage unit 1 in the abovefirst to third embodiments, the guide pattern data may be corrected byuse of a correction value specified by the user.

Although the opening of the guide pattern has been shifted in the abovefirst embodiment and the opening of the guide pattern has been rotatedin each of the above second and third embodiments, these may be combinedas illustrated in FIG. 18.

Although the design data and the pattern shape of the physical guidehave periodic structures in the above first to third embodiments, theymay have random structures.

At least part of the guide pattern data correcting device described inthe above embodiments may be implemented in either hardware or software.When implemented in software, a program that realizes at least part offunctions of the guide pattern data correcting device may be stored on arecording medium such as a flexible disk or CD-ROM and read and executedby a computer. The recording medium is not limited to a removablerecording medium such as a magnetic disk or optical disk, but may be anon-removable recording medium such as a hard disk device or memory.

The program that realizes at least part of the functions of the guidepattern data correcting device may be distributed through acommunication line (including wireless communications) such as theInternet. Further, the program may be encrypted, modulated, orcompressed to be distributed through a wired line or wireless line suchas the Internet or to be distributed by storing the program on arecording medium.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel methods and systems describedherein may be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the methods andsystems described herein may be made without departing from the spiritof the inventions. The accompanying claims and their equivalents areintended to cover such forms or modifications as would fall within thescope and spirit of the inventions.

What is claimed is:
 1. A guide pattern data generating method forcorrecting guide pattern data of a physical guide for formation of ablock copolymer material to be microphase-separated, wherein: thephysical guide has a plurality of portions in the guide pattern data,the plurality of portions being disposed along a predetermined directionwithin a plane based on the pattern data of the plurality of portions,the pattern data of the plurality of portions being included in theguide pattern data, and at least two portions out of the plurality ofportions are connected to each other, the method comprising: subjectingthe guide pattern data to correction in such a manner that the portionsthat have both ends respectively connected to other portions rotateabout the portion's centroid within the plane wherein: the plurality ofportions have the same rotation angle; and the correction causes thesize of a region shared by the at least two connected portions toreduce.
 2. The guide pattern data generating method according to claim1, wherein rotating the portions includes rotating the portions 4degrees.
 3. The guide pattern data correcting method according to claim1, wherein centroids of the plurality of portions are disposed on astraight line.